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FDS4141 P-Channel MOSFET

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Description

FDS4141 P-Channel PowerTrench® MOSFET www.onsemi.com FDS4141 P-Channel PowerTrench® MOSFET -40V, -10.8A, 13.0mΩ .
This P-Channel MOSFET has been produced using On Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized BVDSS capabi.

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Datasheet Specifications

Part number
FDS4141
Manufacturer
Fairchild Semiconductor
File Size
541.09 KB
Datasheet
FDS4141-FairchildSemiconductor.pdf
Description
P-Channel MOSFET

Features

* Max rDS(on) = 13.0mΩ at VGS = -10V, ID = -10.5A
* Max rDS(on) = 19.0mΩ at VGS = -4.5V, ID = -8.4A
* High performance trench technology for extremely low rDS(on)

Applications

* and optimized switching performance capability reducing power dissipation losses in converter/inverter applications. Applications
* Control switch in synchronous & non-synchronous buck
* Load switch
* Inverter D D D D SO-8 Pin 1 G S S S D5 D6 D7 D8 4G 3S 2S 1S MOSFET

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