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FDV302P Digital FET/ P-Channel

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Description

October 1997 FDV302P Digital FET, P-Channel General .
This P-Channel logic level enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology.

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Datasheet Specifications

Part number
FDV302P
Manufacturer
Fairchild Semiconductor
File Size
63.55 KB
Datasheet
FDV302P_FairchildSemiconductor.pdf
Description
Digital FET/ P-Channel

Features

* -25 V, -0.12 A continuous, -0.5 A Peak. RDS(ON) = 13 Ω @ VGS= -2.7 V RDS(ON) = 10 Ω @ VGS = -4.5 V. Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5V. Gate-Source Zener for ESD ruggedness. >6kV Human Body Model Compact industry standard SOT-23 surface mo

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