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FDV302P

Digital FET/ P-Channel

FDV302P Features

* -25 V, -0.12 A continuous, -0.5 A Peak. RDS(ON) = 13 Ω @ VGS= -2.7 V RDS(ON) = 10 Ω @ VGS = -4.5 V. Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5V. Gate-Source Zener for ESD ruggedness. >6kV Human Body Model Compact industry standard SOT-23 surface mo

FDV302P General Description

This P-Channel logic level enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applicati.

FDV302P Datasheet (63.55 KB)

Preview of FDV302P PDF

Datasheet Details

Part number:

FDV302P

Manufacturer:

Fairchild Semiconductor

File Size:

63.55 KB

Description:

Digital fet/ p-channel.

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FDV302P Digital FET P-Channel Fairchild Semiconductor

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