FQA13N80_F109 - MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	FQA13N80_F109
Manufacturer	Fairchild ↗ Semiconductor
File Size	1.99 MB
Description	MOSFET
Datasheet	FQA13N80_F109-FairchildSemiconductor.pdf

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

12.6 A, 800 V, RDS(on) = 750 mΩ (Max. ) @ VGS = 10 V, ID = 6.3 A.
Low Gate Charge (Typ. 68 nC).
Low Crss (Typ. 30 pF).
100% Avalanche Tested D G DS TO-3PN G S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter VDSS ID IDM VGSS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed Gate-Source.

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Published: Jan 16, 2017 |