FQA13N80_F109 Datasheet - Fairchild Semiconductor

FQA13N80_F109 MOSFET

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy .

FQA13N80_F109 Features

* 12.6 A, 800 V, RDS(on) = 750 mΩ (Max.) @ VGS = 10 V, ID = 6.3 A

* Low Gate Charge (Typ. 68 nC)

* Low Crss (Typ. 30 pF)

* 100% Avalanche Tested D G DS TO-3PN G S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter VDSS ID IDM VGSS EAS

FQA13N80_F109-FairchildSemiconductor.pdf