Part number:
FQA13N80_F109
Manufacturer:
Fairchild Semiconductor
File Size:
1.99 MB
Description:
Mosfet.
FQA13N80_F109-FairchildSemiconductor.pdf
Datasheet Details
Part number:
FQA13N80_F109
Manufacturer:
Fairchild Semiconductor
File Size:
1.99 MB
Description:
Mosfet.
FQA13N80_F109, MOSFET
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.
This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy
FQA13N80_F109 Features
* 12.6 A, 800 V, RDS(on) = 750 mΩ (Max.) @ VGS = 10 V, ID = 6.3 A
* Low Gate Charge (Typ. 68 nC)
* Low Crss (Typ. 30 pF)
* 100% Avalanche Tested D G DS TO-3PN G S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter VDSS ID IDM VGSS EAS
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