FQA13N80_F109 MOSFET

Fairchild Semiconductor

Description

FQA13N80_F109 * N-Channel QFET® MOSFET FQA13N80_F109 N-Channel QFET® MOSFET 800 V, 12.6 A, 750 mΩ April 2014 .
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

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Datasheet Specifications

Part number: FQA13N80_F109
Manufacturer: Fairchild Semiconductor
File Size: 1.99 MB
Datasheet: FQA13N80_F109-FairchildSemiconductor.pdf
Description: MOSFET

Features

* 12.6 A, 800 V, RDS(on) = 750 mΩ (Max. ) @ VGS = 10 V, ID = 6.3 A
* Low Gate Charge (Typ. 68 nC)
* Low Crss (Typ. 30 pF)
* 100% Avalanche Tested D G DS TO-3PN G S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter VDSS ID IDM VGSS EAS

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FQA13N80_F109 MOSFET Fairchild Semiconductor

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