FQA55N10 Datasheet - Fairchild Semiconductor

FQA55N10 100V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

FQA55N10 Features

* 61A, 100V, RDS(on) = 0.026Ω @VGS = 10 V Low gate charge ( typical 75 nC) Low Crss ( typical 130 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G! G DS ! " " "

FQA55N10_FairchildSemiconductor.pdf