FQA70N15 - N-Channel Power MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	FQA70N15
Manufacturer	Fairchild ↗ Semiconductor
File Size	2.75 MB
Description	N-Channel Power MOSFET
Datasheet	FQA70N15_FairchildSemiconductor.pdf

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

70 A, 100 V, RDS(on) = 28 mΩ (Max)@VGS = 10 V, ID = 35 A.
Low Gate Charge (Typ. 135 nC).
Low Crss (Typ.135 pF).
100% Avalanche Tested.
175°C Maximum Junction Temperature Rating D G DS TO-3PN G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Curent - Pulsed (Note 1) Gate.

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Published: Apr 1, 2005 |