FQA70N15 Datasheet (Fairchild Semiconductor)

FQA70N15, N-Channel Power MOSFET

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy

FQA70N15 Features

* 70 A, 100 V, RDS(on) = 28 mΩ (Max)@VGS = 10 V, ID = 35 A

* Low Gate Charge (Typ. 135 nC)

* Low Crss (Typ.135 pF)

* 100% Avalanche Tested

* 175°C Maximum Junction Temperature Rating D G DS TO-3PN G S Absolute Maximum Ratings TC = 25°C unless otherwise no