FQA70N15 Datasheet, Mosfet, Fairchild Semiconductor

FQA70N15 Features

• Mosfet
• 70 A, 100 V, RDS(on) = 28 mΩ (Max)@VGS = 10 V, ID = 35 A
• Low Gate Charge (Typ. 135 nC)
• Low Crss (Typ.135 pF)
• 100% Avalanche Tested
• 175°

PDF File Details

Part number:

FQA70N15

Manufacturer:

Fairchild Semiconductor

File Size:

2.75MB

Download:

📄 Datasheet

Description:

N-channel power mosfet. This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technolog

FQA70N15 Application

• Applications Features
• 70 A, 100 V, RDS(on) = 28 mΩ (Max)@VGS = 10 V, ID = 35 A
• Low Gate Charge (Typ. 135 nC)
• Low Crs

TAGS

FQA70N15

Fairchild Semiconductor

📁 Related Datasheet

FQA70N10 - 100V N-Channel MOSFET (Fairchild Semiconductor)
FQA70N10 August 2000 QFET FQA70N10 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are pro.

FQA70N15 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 70A@ TC=25℃ ·Drain Source Voltage- : VDSS= 150V(Min) ·Static Drain-Source On-Resistance .

FQA70N08 - 80V N-Channel MOSFET (Fairchild Semiconductor)
FQA70N08 August 2000 QFET FQA70N08 80V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are prod.

FQA7N60 - 600V N-Channel MOSFET (Fairchild Semiconductor)
FQA7N60 April 2000 QFET FQA7N60 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produc.

FQA7N65C - 650V N-Channel MOSFET (Fairchild Semiconductor)
FQA7N65C 650V N-Channel MOSFET FQA7N65C 650V N-Channel MOSFET Features • 7A, 650V, RDS(on) = 1.4Ω @VGS = 10 V • Low gate charge ( typical 28 nC) • Lo.

FQA7N80 - 800V N-Channel MOSFET (Fairchild Semiconductor)

 
 
  QFET  $ $ $ $ $ $ % &' ())* +
 , - .Ω /* , -) * 0      1     2) 3 0   1     -4.

FQA7N80C - 800V N-Channel MOSFET (Fairchild Semiconductor)
FQA7N80C 800V N-Channel MOSFET September 2006 QFET FQA7N80C 800V N-Channel MOSFET Features • • • • • • 7.0A, 800V, RDS(on) = 1.9Ω @VGS = 10 V Low ga.

FQA7N80C_F109 - N-Channel MOSFET (Fairchild Semiconductor)
FQA7N80C_F109 — N-Channel QFET® MOSFET FQA7N80C_F109 N-Channel QFET® MOSFET 800 V, 7 A, 1.9 Ω Features • 7.0 A, 800 V, RDS(on) = 1.9 Ω (Max.) @ VGS =.

FQA7N90 - 900V N-Channel MOSFET (Fairchild Semiconductor)
FQA7N90 March 2001 QFET FQA7N90 900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produc.

FQA7N90M - 900V N-Channel MOSFET (Fairchild Semiconductor)
FQA7N90M January 2002 QFET FQA7N90M 900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are pr.