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FQAF7N90 Datasheet - Fairchild Semiconductor

FQAF7N90 900V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

FQAF7N90 Features

* 5.2A, 900V, RDS(on) = 1.55Ω @VGS = 10 V Low gate charge ( typical 45 nC) Low Crss ( typical 20 pF) Fast switching 100% avalanche tested Improved dv/dt capability D !

* ◀ ▲

* G! G D S TO-3PF FQAF Series ! S Absolute Maxi

FQAF7N90_FairchildSemiconductor.pdf

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Datasheet Details

Part number:

FQAF7N90

Manufacturer:

Fairchild Semiconductor

File Size:

680.08 KB

Description:

900v n-channel mosfet.

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FQAF7N90 FQAF7N90 900V N-Channel MOSFET Fairchild Semiconductor

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