FQAF7N90 900V N-Channel MOSFET

Fairchild Semiconductor

Description

FQAF7N90 March 2001 QFET FQAF7N90 900V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

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Datasheet Specifications

Part number: FQAF7N90
Manufacturer: Fairchild Semiconductor
File Size: 680.08 KB
Datasheet: FQAF7N90_FairchildSemiconductor.pdf
Description: 900V N-Channel MOSFET

Features

* 5.2A, 900V, RDS(on) = 1.55Ω @VGS = 10 V Low gate charge ( typical 45 nC) Low Crss ( typical 20 pF) Fast switching 100% avalanche tested Improved dv/dt capability D !
* ◀ ▲
* G! G D S TO-3PF FQAF Series ! S Absolute Maxi

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FQAF7N90 900V N-Channel MOSFET Fairchild Semiconductor

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