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FQAF10N80 Datasheet - Fairchild Semiconductor

FQAF10N80 800V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

FQAF10N80 Features

* 6.7A, 800V, RDS(on) = 1.05Ω @VGS = 10 V Low gate charge ( typical 55 nC) Low Crss ( typical 24 pF) Fast switching 100% avalanche tested Improved dv/dt capability D !

* ◀ ▲

* G! G D S TO-3PF FQAF Series ! S Absolute Maxi

FQAF10N80_FairchildSemiconductor.pdf

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Datasheet Details

Part number:

FQAF10N80

Manufacturer:

Fairchild Semiconductor

File Size:

700.01 KB

Description:

800v n-channel mosfet.

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FQAF10N80 FQAF10N80 800V N-Channel MOSFET Fairchild Semiconductor

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