FQAF12P20 Datasheet - Fairchild Semiconductor

FQAF12P20 200V P-Channel MOSFET

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

FQAF12P20 Features

* -11.5A, -200V, RDS(on) = 0.47Ω @VGS = -10 V Low gate charge ( typical 31 nC) Low Crss ( typical 30 pF) Fast switching 100% avalanche tested Improved dv/dt capability S !

* G! ▶ ▲

* G D S TO-3PF FQAF Series ! D Absolute

FQAF12P20_FairchildSemiconductor.pdf