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FQAF12N60

600V N-Channel MOSFET

FQAF12N60 Features

* 7.8A, 600V, RDS(on) = 0.7 Ω @ VGS = 10 V Low gate charge ( typical 42 nC) Low Crss ( typical 25 pF) Fast switching 100% avalanche tested Improved dv/dt capabilit D ! " G! G D S ! " " " TO-3PF FQAF Series ! S Absolute Maximum Ratings

FQAF12N60 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

FQAF12N60 Datasheet (539.06 KB)

Preview of FQAF12N60 PDF

Datasheet Details

Part number:

FQAF12N60

Manufacturer:

Fairchild Semiconductor

File Size:

539.06 KB

Description:

600v n-channel mosfet.

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TAGS

FQAF12N60 600V N-Channel MOSFET Fairchild Semiconductor

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