FQAF11N90C - MOSFET
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.
This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy
FQAF11N90C Features
* 7.0 A, 900 V, RDS(on) = 1.1 Ω (Max.) @ VGS = 10 V, ID = 3.5 A
* Low Gate Charge (Typ. 60 nC)
* Low Crss (Typ. 23 pF)
* 100% Avalanche Tested D G D S TO-3PF Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD T
