FQAF11N90C Datasheet - Fairchild Semiconductor

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FQAF11N90C MOSFET

FQAF11N90C * N-Channel QFET® MOSFET FQAF11N90C N-Channel QFET® MOSFET 900 V, 7.0 A, 1.1 Ω December 2013 .
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

FQAF11N90C-FairchildSemiconductor.pdf

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Datasheet Details

Part number:

FQAF11N90C

Manufacturer:

Fairchild Semiconductor

File Size:

830.44 KB

Description:

MOSFET

Features

* 7.0 A, 900 V, RDS(on) = 1.1 Ω (Max. ) @ VGS = 10 V, ID = 3.5 A
* Low Gate Charge (Typ. 60 nC)
* Low Crss (Typ. 23 pF)
* 100% Avalanche Tested D G D S TO-3PF Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD T

FQAF11N90C Distributors

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FQAF11N90C MOSFET Fairchild Semiconductor

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