FQAF11N90C - MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	FQAF11N90C
Manufacturer	Fairchild Semiconductor
File Size	830.44 KB
Description	MOSFET
Datasheet	FQAF11N90C-FairchildSemiconductor.pdf

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

7.0 A, 900 V, RDS(on) = 1.1 Ω (Max. ) @ VGS = 10 V, ID = 3.5 A.
Low Gate Charge (Typ. 60 nC).
Low Crss (Typ. 23 pF).
100% Avalanche Tested D G D S TO-3PF Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed Gate-So.

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Published: Jan 16, 2017 |