FQAF11N90 Datasheet | Fairchild Semiconductor

September 2000 QFET 900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switch mode power supply. Features - - - - - - 7.2A, 900V, RDS(on) = 0.96 Ω @ VGS = 10 V Low gate charge ( typical 72 n C) Low Crss ( typical 30 p F) Fast switching 100% avalanche tested Improved dv/dt capability ! " G! G D S ! " " " TO-3PF FQAF...