FQAF11N90 - 900V N-Channel MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	FQAF11N90
Manufacturer	Fairchild ↗ Semiconductor
File Size	663.85 KB
Description	900V N-Channel MOSFET
Datasheet	FQAF11N90_FairchildSemiconductor.pdf

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

7.2A, 900V, RDS(on) = 0.96 Ω @ VGS = 10 V Low gate charge ( typical 72 nC) Low Crss ( typical 30 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G! G D S ! " " " TO-3PF FQAF Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Curr.

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Published: Apr 1, 2005 |