FQAF11N90 Datasheet (Fairchild Semiconductor)

FQAF11N90, 900V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i

FQAF11N90 Features

* 7.2A, 900V, RDS(on) = 0.96 Ω @ VGS = 10 V Low gate charge ( typical 72 nC) Low Crss ( typical 30 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G! G D S ! " " " TO-3PF FQAF Series ! S Absolute Maximum Rating