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FQB12N20L Datasheet - Fairchild Semiconductor

FQB12N20L 200V LOGIC N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

FQB12N20L Features

* 11.6A, 200V, RDS(on) = 0.28Ω @VGS = 10 V Low gate charge ( typical 16 nC) Low Crss ( typical 17 pF) Fast switching 100% avalanche tested Improved dv/dt capability Low level gate drive requirement allowing direct opration from logi

FQB12N20L_FairchildSemiconductor.pdf

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Datasheet Details

Part number:

FQB12N20L

Manufacturer:

Fairchild Semiconductor

File Size:

607.28 KB

Description:

200v logic n-channel mosfet.

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FQB12N20L FQB12N20L 200V LOGIC N-Channel MOSFET Fairchild Semiconductor

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