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FQB19N10 Datasheet - Fairchild Semiconductor

FQB19N10 100V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

FQB19N10 Features

* 19A, 100V, RDS(on) = 0.1Ω @VGS = 10 V Low gate charge ( typical 19 nC) Low Crss ( typical 32 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G S G! ! " " " D

FQB19N10_FairchildSemiconductor.pdf

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Datasheet Details

Part number:

FQB19N10

Manufacturer:

Fairchild Semiconductor

File Size:

575.40 KB

Description:

100v n-channel mosfet.

FQB19N10 Distributor

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FQB19N10 FQB19N10 100V N-Channel MOSFET Fairchild Semiconductor