FQB19N10 Datasheet, Mosfet, Fairchild Semiconductor

✔ FQB19N10 Features

19A, 100V, RDS(on) = 0.1Ω @VGS = 10 V Low gate charge ( typical 19 nC) Low Crss ( typical 32 pF) Fast switching 100% avalanche tested Improved dv/dt capabil

✔ FQB19N10 Application

such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. D TM Features

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FQB19N10

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Fairchild Semiconductor

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📄 Datasheet

Description:

100v n-channel mosfet. These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS techn

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MOSFET N-CH 100V 19A D2PAK

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FQB19N10LTM

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FQB19N10 100V N-Channel MOSFET Fairchild Semiconductor