FQB19N10 - 100V N-Channel MOSFET
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i
FQB19N10 Features
* 19A, 100V, RDS(on) = 0.1Ω @VGS = 10 V Low gate charge ( typical 19 nC) Low Crss ( typical 32 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G S G! ! " " " D
