FQB19N20C 200V N-Channel MOSFET

Fairchild Semiconductor

Description

FQB19N20C * N-Channel QFET® MOSFET FQB19N20C N-Channel QFET® MOSFET 200 V, 19 A, 170 mΩ November 2013 .
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

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Datasheet Specifications

Part number: FQB19N20C
Manufacturer: Fairchild Semiconductor
File Size: 956.07 KB
Datasheet: FQB19N20C_FairchildSemiconductor.pdf
Description: 200V N-Channel MOSFET

Features

* 19.0 A, 200 V, RDS(on) = 170 mΩ (Max. ) @ VGS = 10 V, ID = 9.5 A
* Low Gate Charge (Typ. 40.5 nC)
* Low Crss (Typ. 85 pF)
* 100% Avalanche Tested
* RoHS Compliant D D G S D2-PAK G Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol Parame

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FQB19N20C 200V N-Channel MOSFET Fairchild Semiconductor

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