Datasheet4U Logo Datasheet4U.com

FQB1P50 - 500V P-Channel MOSFET

Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

  • -1.5A, -500V, RDS(on) = 10.5Ω @VGS = -10 V Low gate charge ( typical 11 nC) Low Crss ( typical 6.0 pF) Fast switching 100% avalanche tested Improved dv/dt capability D S !.
  • G! G S ▶ ▲.
  • D2-PAK FQB Series G D S I2-PAK FQI Series ! D Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continu.

📥 Download Datasheet

Datasheet preview – FQB1P50

Datasheet Details

Part number FQB1P50
Manufacturer Fairchild Semiconductor
File Size 571.43 KB
Description 500V P-Channel MOSFET
Datasheet download datasheet FQB1P50 Datasheet
Additional preview pages of the FQB1P50 datasheet.

📁 Similar Datasheet

Other Datasheets by Fairchild Semiconductor

Full PDF Text Transcription

Click to expand full text
FQB1P50 / FQI1P50 December 2000 QFET FQB1P50 / FQI1P50 500V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for electronic lamp ballasts based on the complementary half bridge topology. TM Features • • • • • • -1.5A, -500V, RDS(on) = 10.5Ω @VGS = -10 V Low gate charge ( typical 11 nC) Low Crss ( typical 6.
Published: |