FQB3N80 800V N-Channel MOSFET

Fairchild Semiconductor

Description

FQB3N80 / FQI3N80 September 2000 QFET FQB3N80 / FQI3N80 800V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

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Datasheet Specifications

Part number: FQB3N80
Manufacturer: Fairchild Semiconductor
File Size: 661.96 KB
Datasheet: FQB3N80_FairchildSemiconductor.pdf
Description: 800V N-Channel MOSFET

Features

* 3.0A, 800V, RDS(on) = 5.0Ω @VGS = 10 V Low gate charge ( typical 15 nC) Low Crss ( typical 7.0 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S G! 3 " " 5 D2-PAK FQB Series G D S I2-PAK FQI Series !

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FQB3N80 800V N-Channel MOSFET Fairchild Semiconductor

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