FQB3N80 Datasheet (Fairchild Semiconductor)

FQB3N80, 800V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i

FQB3N80 Features

* 3.0A, 800V, RDS(on) = 5.0Ω @VGS = 10 V Low gate charge ( typical 15 nC) Low Crss ( typical 7.0 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S G! 3 " " 5 D2-PAK FQB Series G D S I2-PAK FQI Series !