FQB3N90 Datasheet - Fairchild Semiconductor

900V N-Channel MOSFET

FQB3N90 Features

* 3.6A, 900V, RDS(on) = 4.25 Ω @ VGS = 10 V Low gate charge ( typical 20 nC) Low Crss ( typical 8.0 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S G! ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series !

FQB3N90 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

FQB3N90 Datasheet (697.23 KB)

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Datasheet Details

Part number:

FQB3N90

Manufacturer:

Fairchild Semiconductor

File Size:

697.23 KB

Description:

900v n-channel mosfet.

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FQB3N90 900V N-Channel MOSFET Fairchild Semiconductor

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FQB3N90 Features

FQB3N90 General Description

Datasheet Details

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