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FQB47P06 Datasheet - Fairchild Semiconductor

60V P-Channel MOSFET

FQB47P06 Features

* -47A, -60V, RDS(on) = 0.026Ω @VGS = -10 V Low gate charge ( typical 84 nC) Low Crss ( typical 320 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D G! G S !

FQB47P06 General Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse.

FQB47P06 Datasheet (718.90 KB)

Preview of FQB47P06 PDF

Datasheet Details

Part number:

FQB47P06

Manufacturer:

Fairchild Semiconductor

File Size:

718.90 KB

Description:

60v p-channel mosfet.

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FQB47P06 60V P-Channel MOSFET Fairchild Semiconductor

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