FQB4N20L Datasheet (Fairchild Semiconductor) - 200V LOGIC N-Channel MOSFET

FQB4N20L, 200V LOGIC N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the

FQB4N20L Features

* 3.8A, 200V, RDS(on) = 1.35Ω @VGS = 10 V Low gate charge ( typical 4.0 nC) Low Crss ( typical 6.0 pF) Fast switching 100% avalanche tested Improved dv/dt capability Low level gate drive requirement allowing direct operation from lo