FQB4N90 900V N-Channel MOSFET

Fairchild Semiconductor

Description

FQB4N90 / FQI4N90 October 2001 QFET FQB4N90 / FQI4N90 900V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

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Datasheet Specifications

Part number: FQB4N90
Manufacturer: Fairchild Semiconductor
File Size: 609.29 KB
Datasheet: FQB4N90_FairchildSemiconductor.pdf
Description: 900V N-Channel MOSFET

Features

* 4.2A, 900V, RDS(on) = 3.3 Ω @ VGS = 10 V Low gate charge ( typically 24 nC) Low Crss ( typically 9.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G! G S ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series

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FQB4N90 900V N-Channel MOSFET Fairchild Semiconductor

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