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FQB4P25

250V P-Channel MOSFET

FQB4P25 Features

* -4.0A, -250V, RDS(on) = 2.1Ω @VGS = -10 V Low gate charge ( typical 10 nC) Low Crss ( typical 10.3 pF) Fast switching 100% avalanche tested Improved dv/dt capability D G! G S !

* ▶ ▲

* S D2-PAK FQB Series G D S I2-PAK F

FQB4P25 General Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in th.

FQB4P25 Datasheet (579.24 KB)

Preview of FQB4P25 PDF

Datasheet Details

Part number:

FQB4P25

Manufacturer:

Fairchild Semiconductor

File Size:

579.24 KB

Description:

250v p-channel mosfet.

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TAGS

FQB4P25 250V P-Channel MOSFET Fairchild Semiconductor

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