FQB9P25 250V P-Channel MOSFET

Fairchild Semiconductor

Description

FQB9P25 * P-Channel QFET® MOSFET FQB9P25 P-Channel QFET® MOSFET -250 V, -9.4 A, 620 mΩ November 2013 .
These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

📥 Download Datasheet

FQB9P25 Datasheet Preview — Preview of FQB9P25 PDF

Datasheet Specifications

Part number: FQB9P25
Manufacturer: Fairchild Semiconductor
File Size: 775.93 KB
Datasheet: FQB9P25_FairchildSemiconductor.pdf
Description: 250V P-Channel MOSFET

Features

* -9.4 A, -250 V, RDS(on) = 620 mΩ (Max. ) @ VGS = -10 V, ID = -4.7 A
* Low Gate Charge (Typ. 29 nC)
* Low Crss (Typ. 27 pF)
* 100% Avalanche Tested G S D D2-PAK S G D Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR d

FQB9P25 Distributors

📁 Related Datasheet

FQB020ADC-007-M FQB020ADC-007-S FQB020ADC-N07-M FQB020ADC-N07-S FQB10N50CF FQB12N65

📌 All Tags

FQB9P25 250V P-Channel MOSFET Fairchild Semiconductor

Fairchild Semiconductor FQB9P25-like datasheet