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FQD17P06

60V P-Channel MOSFET

FQD17P06 Features

* -12A, -60V, RDS(on) = 0.135Ω @VGS = -10 V Low gate charge ( typical 21 nC) Low Crss ( typical 80 pF) Fast switching 100% avalanche tested Improved dv/dt capability S D G! !

* ▶ ▲

* G S D-PAK FQD Series I-PAK G D S FQU Se

FQD17P06 General Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse.

FQD17P06 Datasheet (682.21 KB)

Preview of FQD17P06 PDF

Datasheet Details

Part number:

FQD17P06

Manufacturer:

Fairchild Semiconductor

File Size:

682.21 KB

Description:

60v p-channel mosfet.

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FQD17P06 60V P-Channel MOSFET Fairchild Semiconductor

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