FQD20N06 - 60V N-Channel MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	FQD20N06
Manufacturer	Fairchild ↗ Semiconductor
File Size	660.63 KB
Description	60V N-Channel MOSFET
Datasheet	FQD20N06_FairchildSemiconductor.pdf

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

16.8A, 60V, RDS(on) = 0.063Ω @ VGS = 10V Low gate charge ( typical 11.5 nC) Low Crss ( typical 25 pF) Fast switching 100% avalanche tested Improved dv/dt capability 150oC maximum junction temperature rating D D ! " G! G S ! " " " D-PAK FQD Series I-PAK G D S FQU Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous.

📁 FQD20N06 Similar Datasheet

Other Datasheets by Fairchild Semiconductor

Published: Apr 1, 2005 |