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FQH90N10V2 MOSFET

FQH90N10V2 Description

FQH90N10V2 100V N-Channel MOSFET FQH90N10V2 100V N-Channel MOSFET .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FQH90N10V2 Features

* 105A, 100V, RDS(on) = 10mΩ @VGS = 10 V
* Low gate charge ( typical 147 nC)
* Low Crss ( typical 300 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
* 175°C maximum junction temperature rating October 2005 QFET ® Desc

FQH90N10V2 Applications

* lowest Rds(on) is required. D GD S TO-247 FQH Series Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Contin

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MOSFET Fairchild Semiconductor
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