FQH90N10V2

MOSFET

Fairchild Semiconductor

FQH90N10V2 Features

* 105A, 100V, RDS(on) = 10mΩ @VGS = 10 V

* Low gate charge ( typical 147 nC)

* Low Crss ( typical 300 pF)

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability

* 175°C maximum junction temperature rating October 2005 QFET ® Desc

FQH90N10V2 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

FQH90N10V2 Datasheet (961.75 KB)

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Datasheet Details

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FQH90N10V2

Manufacturer:

Fairchild Semiconductor

File Size:

961.75 KB

Description:

Mosfet.

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FQH90N10V2 MOSFET Fairchild Semiconductor

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FQH90N10V2 Features

FQH90N10V2 General Description

Datasheet Details

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