FQH90N10V2 Datasheet (Fairchild Semiconductor)

FQH90N10V2, MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i

FQH90N10V2 Features

* 105A, 100V, RDS(on) = 10mΩ @VGS = 10 V

* Low gate charge ( typical 147 nC)

* Low Crss ( typical 300 pF)

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability

* 175°C maximum junction temperature rating October 2005 QFET ® Desc