FQH8N100C - N-Channel MOSFET

ON Semiconductor

FQH8N100C Datasheet Preview — Preview of FQH8N100C PDF

Datasheet Details

Part number	FQH8N100C
Manufacturer	ON Semiconductor ↗
File Size	420.08 KB
Description	N-Channel MOSFET
Datasheet	FQH8N100C-ONSemiconductor.pdf

FQH8N100C Product details

Description

This N Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology.This advanced MOSFET technology has been especially tailored to reduce on state resistance, and to provide superior switching performance and high avalanche energy strength.

Features

8 A, 1000 V, RDS(on) = 1.45ĂW (Max. ) @ VGS = 10 V.
Low Gate Charge (Typ. 53 nC).
Low Crss (Typ. 16 pF).
Fast Switching.
100% Avalanche Tested.
Improved dv/dt Capability.
This Device is Pb.
Free and is RoHS Compliant www. onsemi. com VDS 1000 V RDS(ON) MAX 1.45 W @ 10 V D ID MAX 8A G S N-.

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Published: Apr 14, 2025 |