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FQH8N100C Datasheet - ON Semiconductor

N-Channel MOSFET

FQH8N100C Features

* 8 A, 1000 V, RDS(on) = 1.45ĂW (Max.) @ VGS = 10 V

* Low Gate Charge (Typ. 53 nC)

* Low Crss (Typ. 16 pF)

* Fast Switching

* 100% Avalanche Tested

* Improved dv/dt Capability

* This Device is Pb

* Free and is RoHS Compliant www.onsemi.c

FQH8N100C General Description

This N *Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on *state resistance, and to provide superior switching performance and high avalanch.

FQH8N100C Datasheet (420.08 KB)

Preview of FQH8N100C PDF

Datasheet Details

Part number:

FQH8N100C

Manufacturer:

ON Semiconductor ↗

File Size:

420.08 KB

Description:

N-channel mosfet.

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FQH8N100C N-Channel MOSFET ON Semiconductor

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