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FQI17N08

80V N-Channel MOSFET

FQI17N08 Features

* 16.5A, 80V, RDS(on) = 0.115Ω @VGS = 10 V Low gate charge ( typical 12 nC) Low Crss ( typical 28 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G S G! ! " " "

FQI17N08 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse.

FQI17N08 Datasheet (614.36 KB)

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Datasheet Details

Part number:

FQI17N08

Manufacturer:

Fairchild Semiconductor

File Size:

614.36 KB

Description:

80v n-channel mosfet.

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FQI17N08 80V N-Channel MOSFET Fairchild Semiconductor

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