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FQI17P06

60V P-Channel MOSFET

FQI17P06 Features

* -17A, -60V, RDS(on) = 0.12Ω @VGS = -10 V Low gate charge ( typical 21 nC) Low Crss ( typical 80 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D G! G S !

FQI17P06 General Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse.

FQI17P06 Datasheet (689.74 KB)

Preview of FQI17P06 PDF

Datasheet Details

Part number:

FQI17P06

Manufacturer:

Fairchild Semiconductor

File Size:

689.74 KB

Description:

60v p-channel mosfet.

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FQI17P06 60V P-Channel MOSFET Fairchild Semiconductor

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