FQI30N06 Datasheet (Fairchild Semiconductor)

FQI30N06, 60V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i

FQI30N06 Features

* 30A, 60V, RDS(on) = 0.04Ω @VGS = 10 V Low gate charge ( typical 19 nC) Low Crss ( typical 40 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G S G! ! " " " D