FQI3N25 Datasheet - Fairchild Semiconductor

250V N-Channel MOSFET

FQI3N25 Features

* 2.8A, 250V, RDS(on) = 2.2Ω @VGS = 10 V Low gate charge ( typical 4.0 nC) Low Crss ( typical 4.7 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S G! ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series !

FQI3N25 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

FQI3N25 Datasheet (621.21 KB)

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Datasheet Details

Part number:

FQI3N25

Manufacturer:

Fairchild Semiconductor

File Size:

621.21 KB

Description:

250v n-channel mosfet.

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FQI3N25 250V N-Channel MOSFET Fairchild Semiconductor

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FQI3N25 Features

FQI3N25 General Description

Datasheet Details

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