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FQI3N80 800V N-Channel MOSFET

FQI3N80 Description

FQB3N80 / FQI3N80 September 2000 QFET FQB3N80 / FQI3N80 800V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FQI3N80 Features

* 3.0A, 800V, RDS(on) = 5.0Ω @VGS = 10 V Low gate charge ( typical 15 nC) Low Crss ( typical 7.0 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S G! 3 " " 5 D2-PAK FQB Series G D S I2-PAK FQI Series !

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Datasheet Details

Part number
FQI3N80
Manufacturer
Fairchild Semiconductor
File Size
661.96 KB
Datasheet
FQI3N80_FairchildSemiconductor.pdf
Description
800V N-Channel MOSFET

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800V N-Channel MOSFET Fairchild Semiconductor
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