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FQI33N10L 100V LOGIC N-Channel MOSFET

FQI33N10L Description

FQB33N10L / FQI33N10L September 2000 QFET FQB33N10L / FQI33N10L 100V LOGIC N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FQI33N10L Features

* 33A, 100V, RDS(on) = 0.052Ω @VGS = 10 V Low gate charge ( typical 30 nC) Low Crss ( typical 70 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D D ! " G S G! ! " "

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Datasheet Details

Part number
FQI33N10L
Manufacturer
Fairchild Semiconductor
File Size
660.06 KB
Datasheet
FQI33N10L_FairchildSemiconductor.pdf
Description
100V LOGIC N-Channel MOSFET

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100V LOGIC N-Channel MOSFET Fairchild Semiconductor
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