FQI3N60 Datasheet - Fairchild Semiconductor

600V N-Channel MOSFET

FQI3N60 Features

* 3.0A, 600V, RDS(on) = 3.6Ω @VGS = 10 V Low gate charge ( typical 10 nC) Low Crss ( typical 5.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S G! ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series !

FQI3N60 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

FQI3N60 Datasheet (581.82 KB)

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Datasheet Details

Part number:

FQI3N60

Manufacturer:

Fairchild Semiconductor

File Size:

581.82 KB

Description:

600v n-channel mosfet.

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FQI3N60 600V N-Channel MOSFET Fairchild Semiconductor

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FQI3N60 Features

FQI3N60 General Description

Datasheet Details

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