Datasheet4U Logo Datasheet4U.com

FQI3P50 500V P-Channel MOSFET

FQI3P50 Description

FQB3P50 / FQI3P50 August 2000 QFET FQB3P50 / FQI3P50 500V P-Channel MOSFET General .
These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FQI3P50 Features

* -2.7A, -500V, RDS(on) = 4.9Ω @VGS = -10 V Low gate charge ( typical 18 nC) Low Crss ( typical 9.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D S !
* G! G S ▶ ▲
* D2-PAK FQB Series G D S I2-PAK FQ

📥 Download Datasheet

Preview of FQI3P50 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
FQI3P50
Manufacturer
Fairchild Semiconductor
File Size
645.59 KB
Datasheet
FQI3P50_FairchildSemiconductor.pdf
Description
500V P-Channel MOSFET

📁 Related Datasheet

  • FQI1N60 - 1.3A N-Channel MOSFET (OuCan)
  • FQI27N25TU-F085 - N-Channel MOSFET (ON Semiconductor)
  • FQI4N60 - 600V 4A N-Channel MOSFET (Oucan Semi)
  • FQI4N65 - 4A N-Channel MOSFET (Oucan Semi)
  • FQI5N60C - N-Channel MOSFET (ON Semiconductor)
  • FQI7N60 - N-Channel MOSFET (ON Semiconductor)
  • FQI8N60C - N-Channel MOSFET (ON Semiconductor)

📌 All Tags

Fairchild Semiconductor FQI3P50-like datasheet