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FQI50N06L 60V LOGIC N-Channel MOSFET

FQI50N06L Description

FQB50N06L / FQI50N06L May 2001 QFET FQB50N06L / FQI50N06L 60V LOGIC N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FQI50N06L Features

* 52.4A, 60V, RDS(on) = 0.021Ω @VGS = 10 V Low gate charge ( typical 24.5 nC) Low Crss ( typical 90 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G S G! ! " "

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60V LOGIC N-Channel MOSFET Fairchild Semiconductor
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