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FQI55N10 100V N-Channel MOSFET

FQI55N10 Description

FQB55N10 / FQI55N10 August 2000 QFET FQB55N10 / FQI55N10 100V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FQI55N10 Features

* 55A, 100V, RDS(on) = 0.026Ω @VGS = 10 V Low gate charge ( typical 75 nC) Low Crss ( typical 130 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G S G! ! " " "

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100V N-Channel MOSFET Fairchild Semiconductor
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