FQI55N06 60V N-Channel MOSFET

Fairchild Semiconductor

Description

FQB55N06 / FQI55N06 May 2001 QFET FQB55N06 / FQI55N06 60V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

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Datasheet Specifications

Part number: FQI55N06
Manufacturer: Fairchild Semiconductor
File Size: 601.09 KB
Datasheet: FQI55N06_FairchildSemiconductor.pdf
Description: 60V N-Channel MOSFET

Features

* 55A, 60V, RDS(on) = 0.020Ω @VGS = 10 V Low gate charge ( typical 35 nC) Low Crss ( typical 85 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G S G! ! " " "

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FQI55N06 60V N-Channel MOSFET Fairchild Semiconductor

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