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FQI58N08 N-Channel MOSFET

FQI58N08 Description

www.DataSheet4U.com FQB58N08 / FQI58N08 December 2000 QFET FQB58N08 / FQI58N08 80V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FQI58N08 Features

* 57.5A, 80V, RDS(on) = 0.024Ω @VGS = 10 V Low gate charge ( typical 50 nC) Low Crss ( typical 120 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G S G! ! " "

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N-Channel MOSFET Fairchild Semiconductor
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