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IRFW624B N-Channel MOSFET

IRFW624B Description

IRFW624B / IRFI624B November 2001 IRFW624B / IRFI624B 250V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

IRFW624B Features

* 4.1A, 250V, RDS(on) = 1.1Ω @VGS = 10 V Low gate charge ( typical 13.5 nC) Low Crss ( typical 9.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !
* ◀ ▲
* G! G S D2-PAK IRFW Series G D S I2-PAK I

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N-Channel MOSFET Fairchild Semiconductor
Fairchild Semiconductor IRFW624B-like datasheet