Datasheet4U Logo Datasheet4U.com

IRFW610B Datasheet - Fairchild Semiconductor

IRFW610B N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the a.

IRFW610B Features

* 3.3A, 200V, RDS(on) = 1.5Ω @VGS = 10 V Low gate charge ( typical 7.2 nC) Low Crss ( typical 6.8 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !

* ◀ ▲

* G S D2-PAK IRFW Series G D S I2-PAK IRFI

IRFW610B_FairchildSemiconductor.pdf

Preview of IRFW610B PDF
IRFW610B Datasheet Preview Page 2 IRFW610B Datasheet Preview Page 3

Datasheet Details

Part number:

IRFW610B

Manufacturer:

Fairchild Semiconductor

File Size:

683.58 KB

Description:

N-channel mosfet.

IRFW610B Distributor

📁 Related Datasheet

IRFW610A Power MOSFET (Samsung)

IRFW614A Power MOSFET (Fairchild Semiconductor)

IRFW614B N-Channel MOSFET (Fairchild Semiconductor)

IRFW620A Power MOSFET (Fairchild Semiconductor)

IRFW620B N-Channel MOSFET (Fairchild Semiconductor)

IRFW624A Power MOSFET (Fairchild Semiconductor)

IRFW624B N-Channel MOSFET (Fairchild Semiconductor)

IRFW630A Power MOSFET (Samsung)

TAGS

IRFW610B IRFW610B N-Channel MOSFET Fairchild Semiconductor