Datasheet4U Logo Datasheet4U.com

IRFW620A

Power MOSFET

IRFW620A Features

* Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V Low RDS(ON) : 0.626 Ω (Typ.) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Chara

IRFW620A Datasheet (259.04 KB)

Preview of IRFW620A PDF

Datasheet Details

Part number:

IRFW620A

Manufacturer:

Fairchild Semiconductor

File Size:

259.04 KB

Description:

Power mosfet.

📁 Related Datasheet

IRFW620B N-Channel MOSFET (Fairchild Semiconductor)

IRFW624A Power MOSFET (Fairchild Semiconductor)

IRFW624B N-Channel MOSFET (Fairchild Semiconductor)

IRFW610A Power MOSFET (Samsung)

IRFW610B N-Channel MOSFET (Fairchild Semiconductor)

IRFW614A Power MOSFET (Fairchild Semiconductor)

IRFW614B N-Channel MOSFET (Fairchild Semiconductor)

IRFW630A Power MOSFET (Samsung)

IRFW630B N-Channel MOSFET (Fairchild Semiconductor)

IRFW630B N-Channel MOSFET (ON Semiconductor)

TAGS

IRFW620A Power MOSFET Fairchild Semiconductor

Image Gallery

IRFW620A Datasheet Preview Page 2 IRFW620A Datasheet Preview Page 3

IRFW620A Distributor