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IRFW640A

Power MOSFET

IRFW640A Features

* Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µ A (Max.) @ VDS = 200V Lower RDS(ON) : 0.144 Ω (Typ.) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Ch

IRFW640A Datasheet (263.75 KB)

Preview of IRFW640A PDF

Datasheet Details

Part number:

IRFW640A

Manufacturer:

Fairchild Semiconductor

File Size:

263.75 KB

Description:

Power mosfet.

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TAGS

IRFW640A Power MOSFET Fairchild Semiconductor

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