IRFW640B Datasheet, Mosfet, Fairchild Semiconductor

IRFW640B Features

  • Mosfet
  • 18A, 200V, RDS(on) = 0.18Ω @VGS = 10 V Low gate charge ( typical 45 nC) Low Crss ( typical 45 pF) Fast switching 100% avalanc

PDF File Details

Part number:

IRFW640B

Manufacturer:

Fairchild Semiconductor

File Size:

726.59kb

Download:

📄 Datasheet

Description:

N-channel mosfet. These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

Datasheet Preview: IRFW640B 📥 Download PDF (726.59kb)
Page 2 of IRFW640B Page 3 of IRFW640B

TAGS

IRFW640B
N-Channel
MOSFET
Fairchild Semiconductor

📁 Related Datasheet

IRFW640A - Power MOSFET (Fairchild Semiconductor)
Advanced Power MOSFET IRFW/I640A FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Exte.

IRFW644A - Power MOSFET (Fairchild Semiconductor)
.. $GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved .

IRFW644B - N-Channel MOSFET (Fairchild Semiconductor)
IRFW644B / IRFI644B November 2001 IRFW644B / IRFI644B 250V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect .

IRFW610A - Power MOSFET (Samsung)
            )($785(6 Qýýý$YDODQFKHýý5XJJHGýý7HFKQRORJ\ Qýýý5XJJHGýý*DWHýý2[LGHýý7HFKQRORJ\ý Qýýý/RZHUýý,QSXWýý&DSDFLWDQFH Qýý.

IRFW610B - N-Channel MOSFET (Fairchild Semiconductor)
IRFW610B / IRFI610B November 2001 IRFW610B / IRFI610B 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect .

IRFW614A - Power MOSFET (Fairchild Semiconductor)
$GYDQFHG 3RZHU 026)(7 IRFW/I614A FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Cha.

IRFW614B - N-Channel MOSFET (Fairchild Semiconductor)
IRFW614B / IRFI614B November 2001 IRFW614B / IRFI614B 250V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect .

IRFW620A - Power MOSFET (Fairchild Semiconductor)
Advanced Power MOSFET IRFW/I620A FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Exte.

IRFW620B - N-Channel MOSFET (Fairchild Semiconductor)
IRFW620B / IRFI620B November 2001 IRFW620B / IRFI620B 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect .

IRFW624A - Power MOSFET (Fairchild Semiconductor)
$GYDQFHG 3RZHU 026)(7 IRFW/I624A FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Cha.

Stock and price

onsemi
TRANS MOSFET N-CH 200V 18A 3PIN D2PAK - Tape and Reel (Alt: IRFW640BTM_FP001)
Avnet Americas
IRFW640BTM_FP001
0 In Stock
0
Unit Price : $0
No Longer Stocked
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts