Datasheet4U Logo Datasheet4U.com

SSS6N90A

Advanced Power MOSFET

SSS6N90A Features

* Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 900V Low RDS(ON) : 1.829 Ω (Typ.) SSS6N90A BVDSS = 900 V RDS(on) = 2.3 Ω ID = 3.5 A TO-220F 1 2 3 1.Gate 2. Drain 3. So

SSS6N90A Datasheet (283.80 KB)

Preview of SSS6N90A PDF

Datasheet Details

Part number:

SSS6N90A

Manufacturer:

Fairchild Semiconductor

File Size:

283.80 KB

Description:

Advanced power mosfet.

📁 Related Datasheet

SSS6N90A Advanced Power MOSFET (Sansung Semiconductor)

SSS6N55 (SSS6N60 / SSS6N55) N CHANNEL POWER MOSFETS (Samsung semiconductor)

SSS6N60 (SSS6N60 / SSS6N55) N CHANNEL POWER MOSFETS (Samsung semiconductor)

SSS6N70A Advanced Power MOSFET (Fairchild Semiconductor)

SSS6N70A Advanced Power MOSFET (Sansung Semiconductor)

SSS6N80A Advanced Power MOSFET (Sansung Semiconductor)

SSS60N05 (SSS60N05 / SSS60N06) N CHANNEL POWER MOSFETS (Samsung semiconductor)

SSS60N06 (SSS60N05 / SSS60N06) N CHANNEL POWER MOSFETS (Samsung semiconductor)

SSS1004 N-Channel enhancement mode power field effect transistors (Silikron Semiconductor)

SSS1004 N-Channel MOSFET (GOOD-ARK)

TAGS

SSS6N90A Advanced Power MOSFET Fairchild Semiconductor

Image Gallery

SSS6N90A Datasheet Preview Page 2 SSS6N90A Datasheet Preview Page 3

SSS6N90A Distributor