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NDP608A Datasheet - Fairchild

NDP608A, N-Channel Enhancement Mode Field Effect Transistor

These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
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Features

* 36 and 32A, 80V. RDS(ON) = 0.042and 0.045Ω. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design (3 million/

NDP608A_FairchildSemiconductor.pdf

Preview of NDP608A PDF

Datasheet Details

Part number:

NDP608A

Manufacturer:

Fairchild

File Size:

73.90 KB

Description:

N-channel enhancement mode field effect transistor

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