NDP608BE Datasheet - Fairchild

NDP608BE N-Channel Enhancement Mode Field Effect Transistor

These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high ener.

NDP608BE Features

* 36 and 32A, 80V. RDS(ON) = 0.042and 0.045Ω. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design (3 million/

NDP608BE Datasheet (73.90 KB)

NDP608BE Datasheet Preview — Preview of NDP608BE PDF

Datasheet Details

Part number:

NDP608BE

Manufacturer:

Fairchild

File Size:

73.90 KB

Description:

N-channel enhancement mode field effect transistor.

📁 Related Datasheet

NDP608B N-Channel Enhancement Mode Field Effect Transistor (Fairchild)

NDP608A N-Channel Enhancement Mode Field Effect Transistor (Fairchild)

NDP608AE N-Channel Enhancement Mode Field Effect Transistor (Fairchild)

NDP6020 N-Channel Logic Level Enhancement Mode Field Effect Transistor (Fairchild)

NDP6020P P-Channel Logic Level Enhancement Mode Field Effect Transistor (ON Semiconductor)

NDP6020P P-Channel Logic Level Enhancement Mode Field Effect Transistor (Fairchild)

NDP6030 N-Channel Enhancement Mode Field Effect Transistor (Fairchild)

NDP6030 N-Channel Logic Level Enhancement Mode Field Effect Transistor (Fairchild)

NDP6030 P-Channel Logic Level Enhancement Mode Field Effect Transistor (Fairchild)

NDP6030L N-Channel Logic Level Enhancement Mode Field Effect Transistor (Fairchild)

TAGS

NDP608BE N-Channel Enhancement Mode Field Effect Transistor Fairchild

Image Gallery

NDP608BE Distributor