NDP608B N-Channel Enhancement Mode Field Effect Transistor

Fairchild

Description

May 1994 NDP608A / NDP608AE / NDP608B / NDP608BE NDB608A / NDB608AE / NDB608B / NDB608BE N-Channel Enhancement Mode Field Effect Transistor General D.
These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

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Datasheet Specifications

Part number: NDP608B
Manufacturer: Fairchild
File Size: 73.90 KB
Datasheet: NDP608B_FairchildSemiconductor.pdf
Description: N-Channel Enhancement Mode Field Effect Transistor

Features

* 36 and 32A, 80V. RDS(ON) = 0.042and 0.045Ω. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design (3 million/

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NDP608B N-Channel Enhancement Mode Field Effect Transistor Fairchild

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