NDS355AN Datasheet - Fairchild

NDS355AN N-Channel Logic Level Enhancement Mode Field Effect Transistor

SuperSOTTM-3 N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low volt.

NDS355AN Features

* 1.7A, 30 V, RDS(ON) = 0.125 Ω @ VGS = 4.5 V RDS(ON) = 0.085 Ω @ VGS = 10 V. Industry standard outline SOT-23 surface mount package using proprietary SuperSOTTM-3 design for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and

NDS355AN_FairchildSemiconductor.pdf

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Datasheet Details

Part number:

NDS355AN

Manufacturer:

Fairchild

File Size:

60.76 KB

Description:

N-channel logic level enhancement mode field effect transistor.

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NDS355AN NDS355AN N-Channel Logic Level Enhancement Mode Field Effect Transistor Fairchild

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