NDS355AN N-Channel Logic Level Enhancement Mode Field Effect Transistor

Fairchild

Description

January 1997 NDS355AN N-Channel Logic Level Enhancement Mode Field Effect Transistor General .
SuperSOTTM-3 N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS.

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Datasheet Specifications

Part number: NDS355AN
Manufacturer: Fairchild
File Size: 60.76 KB
Datasheet: NDS355AN_FairchildSemiconductor.pdf
Description: N-Channel Logic Level Enhancement Mode Field Effect Transistor

Features

* 1.7A, 30 V, RDS(ON) = 0.125 Ω @ VGS = 4.5 V RDS(ON) = 0.085 Ω @ VGS = 10 V. Industry standard outline SOT-23 surface mount package using proprietary SuperSOTTM-3 design for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and

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NDS355AN N-Channel Logic Level Enhancement Mode Field Effect Transistor Fairchild

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