NDS355AN - N-Channel Logic Level Enhancement Mode Field Effect Transistor

Product Overview

Fairchild

Datasheet Details

Part number	NDS355AN
Manufacturer	Fairchild
File Size	60.76 KB
Description	N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet	NDS355AN Datasheet
Additional preview pages of the NDS355AN datasheet.

Product details

Description

SuperSOTTM-3 N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

Features

1.7A, 30 V, RDS(ON) = 0.125 Ω @ VGS = 4.5 V RDS(ON) = 0.085 Ω @ VGS = 10 V. Industry standard outline SOT-23 surface mount package using proprietary SuperSOTTM-3 design for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability. Compact industry standard SOT-23 surface mount package. _______________________________________________________________________________ D G S Absolute Maximum Rati.

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Published: May 12, 2005 |