BSS138 - N-Channel MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	BSS138
Manufacturer	Fairchild ↗ Semiconductor
File Size	95.73 KB
Description	N-Channel MOSFET
Datasheet	BSS138_FairchildSemiconductor.pdf

These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

0.22 A, 50V. RDS(ON) = 3.5Ω @ VGS = 10V. High density cell design for extremely low RDS(ON). Rugged and Relaible Compact industry standard SOT-23 surface mount package. _______________________________________________________________________________ D G S Absolute Maximum Ratings Symbol VDSS VDGR VGSS Parameter Drain-Source Voltage T A = 25°C unless otherwise noted BSS138 50 50 ± 20 ± 40 0.22 0.88 0.36 2.8 -55 to 150 300 Units V V V Drain-Gate Voltage (RGS < 20KΩ) Gate-Source Voltage - C.

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Published: Mar 23, 2005 |