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FDB3860 N-Channel MOSFET

FDB3860 Description

FDB3860 N-Channel PowerTrench® MOSFET March 2009 FDB3860 N-Channel PowerTrench® MOSFET 100 V, 30 A, 37 mΩ .
This N-Channel MOSFET is rugged gate version of Fairchild Semiconductor‘s advanced Power Trench® process.

FDB3860 Features

* Max rDS(on) = 37 mΩ at VGS = 10 V, ID = 5.9 A
* High performance trench technology for extremely low rDS(on)
* 100% UIL tested

FDB3860 Applications

* Applications
* DC-AC Conversion
* Synchronous Rectifier D D G S TO-263AB FDB Series G S MOSFET Maximum Ratings TC = 25 °C unless otherwise noted www. DataSheet4U. com Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Conti

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N-Channel MOSFET Fairchild Semiconductor
Fairchild Semiconductor FDB3860-like datasheet